Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET
1/f noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, 1 noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulat...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
2008
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| Subjects: | |
| Online Access: | http://scholars.utp.edu.my/id/eprint/462/ http://scholars.utp.edu.my/id/eprint/462/1/paper.pdf |