Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism
Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-d...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Universiti Kebangsaan Malaysia
2013
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| Online Access: | http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/1/09%2520Yussof%2520Wahab.pdf |
| _version_ | 1848810981642207232 |
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| author | Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman, |
| author_facet | Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman, |
| author_sort | Yussof Wahab, |
| building | UKM Institutional Repository |
| collection | Online Access |
| description | Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer. |
| first_indexed | 2025-11-14T23:39:09Z |
| format | Article |
| id | oai:generic.eprints.org:5901 |
| institution | Universiti Kebangasaan Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T23:39:09Z |
| publishDate | 2013 |
| publisher | Universiti Kebangsaan Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | oai:generic.eprints.org:59012016-12-14T06:39:48Z http://journalarticle.ukm.my/5901/ Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman, Silicon nanowires (SiNWs) with diameter of about a few nanometers and length of 3 μm on silicon wafers were synthesized by very high frequency plasma enhanced chemical vapor deposition. Scanning electron microscopy (SEM) observations showed that the silicon nanowires were grown randomly and energy-dispersive X-ray spectroscopy analysis indicates that the nanowires have the composition of Si, Au and O elements. The SiNWs were characterized by high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. SEM micrographs displayed SiNWs that are needle-like with a diameter ranged from 30 nm at the top to 100 nm at the bottom of the wire and have length a few of micrometers. In addition, HRTEM showed that SiNWs consist of crystalline silicon core and amorphous silica layer. Universiti Kebangsaan Malaysia 2013-02 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5901/1/09%2520Yussof%2520Wahab.pdf Yussof Wahab, and Habib Hamidinezhad, and Zulkafli Othaman, (2013) Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism. Sains Malaysiana, 42 (2). pp. 183-186. ISSN 0126-6039 http://www.ukm.my/jsm/ |
| spellingShingle | Yussof Wahab, Habib Hamidinezhad, Zulkafli Othaman, Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
| title | Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
| title_full | Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
| title_fullStr | Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
| title_full_unstemmed | Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
| title_short | Si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via VLS mechanism |
| title_sort | si nanowires produced by very high frequency plasma enhanced chemical vapor deposition via vls mechanism |
| url | http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/ http://journalarticle.ukm.my/5901/1/09%2520Yussof%2520Wahab.pdf |