Photoluminescence and raman scattering of GaAs1-xBix alloy

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Photoluminescence and raman scattering of GaAs1-xBix alloy

Photoluminescence (PL) and Raman spectra of GaAs1-xBix samples grown at different rates (0.09 to 0.5 µm/h) were investigated. The PL peak wavelength initially redshifted with the increase of growth rate and reached the longest wavelength (1158 nm) for sample grown at 0.23 µm/h. This is followed...

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Bibliographic Details
Main Authors:	L. Hasanah, Julian, C., Mulyanti, B., Aransa, A., Sumatri, R., M.H. Johari, David, J.P.R., Abdul Rahman Mohmad
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2020
Online Access:	http://journalarticle.ukm.my/15951/ http://journalarticle.ukm.my/15951/1/21.pdf

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