Silicon carbide (SiC) insulated gate bipolar transistors (IGBTs) for high voltage applications

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Silicon carbide (SiC) insulated gate bipolar transistors (IGBTs) for high voltage applications

The significant interest that SiC has attracted over the last decades, coupled with the ease of voltage control and low conduction losses of the IGBTs, have led to their development and sample fabrication. Although these devices demonstrated the advantages that SiC IGBTs can bring in High Voltage po...

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Bibliographic Details
Main Author:	Almpanis, Ioannis
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2024
Subjects:	High Voltage power applications; Device modelling; Converter-level simulations
Online Access:	https://eprints.nottingham.ac.uk/78715/

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