Silicon carbide (SiC) insulated gate bipolar transistors (IGBTs) for high voltage applications
The significant interest that SiC has attracted over the last decades, coupled with the ease of voltage control and low conduction losses of the IGBTs, have led to their development and sample fabrication. Although these devices demonstrated the advantages that SiC IGBTs can bring in High Voltage po...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
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2024
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| Online Access: | https://eprints.nottingham.ac.uk/78715/ |