APA (7th ed.) Citation

Almpanis, I. (2024). Silicon carbide (SiC) insulated gate bipolar transistors (IGBTs) for high voltage applications.

Chicago Style (17th ed.) Citation

Almpanis, Ioannis. Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) for High Voltage Applications. 2024.

MLA (9th ed.) Citation

Almpanis, Ioannis. Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) for High Voltage Applications. 2024.

Warning: These citations may not always be 100% accurate.