Investigation of structural, electrical and optical properties of advanced wide bandgap semiconductor materials and devices

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Investigation of structural, electrical and optical properties of advanced wide bandgap semiconductor materials and devices

This thesis reports an investigation of deep level defects in p-i-n Al0.6Ga0.4N/Al0.5Ga0.5N multi quantum wells (MQWs) based deep ultraviolet light emitting diodes (DUV-LED), In0.09Ga0.91N/GaN MQWs based ultraviolet photodetector (UV-PD) and NiO/β-Ga2O3 heterojunction diodes. Firstly, different anal...

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Bibliographic Details
Main Author:	ALMALKI, Abdulaziz
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2023
Subjects:	Deep level defects; Multi quantum wells; Ultraviolet light emitting diodes; Heterojunction diodes
Online Access:	https://eprints.nottingham.ac.uk/74506/

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