Investigation of structural, electrical and optical properties of advanced wide bandgap semiconductor materials and devices
This thesis reports an investigation of deep level defects in p-i-n Al0.6Ga0.4N/Al0.5Ga0.5N multi quantum wells (MQWs) based deep ultraviolet light emitting diodes (DUV-LED), In0.09Ga0.91N/GaN MQWs based ultraviolet photodetector (UV-PD) and NiO/β-Ga2O3 heterojunction diodes. Firstly, different anal...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
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2023
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| Online Access: | https://eprints.nottingham.ac.uk/74506/ |