Investigation of advanced semiconductor materials and devices for solar cell applications

High performance optoelectronic p-i-n devices based on dilute nitride GaAsPN and InGaP have been fabricated and investigated as promising III-V semiconductor materials of choice for space and photovoltaic applications due their large direct band gaps and superior radiation resistance. However, there...

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Bibliographic Details
Main Author: Alotaibi, Saud
Format: Thesis (University of Nottingham only)
Language:English
Published: 2023
Subjects:
Online Access:https://eprints.nottingham.ac.uk/74136/

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