Investigation of advanced semiconductor materials and devices for solar cell applications
High performance optoelectronic p-i-n devices based on dilute nitride GaAsPN and InGaP have been fabricated and investigated as promising III-V semiconductor materials of choice for space and photovoltaic applications due their large direct band gaps and superior radiation resistance. However, there...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
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2023
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| Online Access: | https://eprints.nottingham.ac.uk/74136/ |