Investigation of structural, electrical and optical properties of doped dilute GaAsBi grown by molecular beam epitaxy

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Investigation of structural, electrical and optical properties of doped dilute GaAsBi grown by molecular beam epitaxy

This thesis reports an investigation of the strutural, electrical and optical properties of dilute bimuth (Bi) containing semiconductors materials, namely GaAsBi grown by Molecular Beam Epitaxy (MBE) on GaAs substrates at low temperature. It is well known that the addition of a few percent of Bi in...

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Bibliographic Details
Main Author:	Alhassan, Sultan
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2022
Subjects:	GaAsBi Molecular Beam Epitaxy MBE Dilute bimuth Bi
Online Access:	https://eprints.nottingham.ac.uk/69349/

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