Investigation of structural, electrical and optical properties of doped dilute GaAsBi grown by molecular beam epitaxy
This thesis reports an investigation of the strutural, electrical and optical properties of dilute bimuth (Bi) containing semiconductors materials, namely GaAsBi grown by Molecular Beam Epitaxy (MBE) on GaAs substrates at low temperature. It is well known that the addition of a few percent of Bi in...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2022
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| Online Access: | https://eprints.nottingham.ac.uk/69349/ |