Heterogeneous integration of WBG devices and magnetic components: manufacturing and design optimisation
Wide-bandgap semiconductor devices, such as the ones based on silicon carbide (SiC) and gallium nitride (GaN), have been one of the biggest disruptive innovations in power electronics. The properties of these materials allow designers to develop more efficient and power dense converters. However, ma...
| Main Author: | |
|---|---|
| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2022
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/67457/ |