Lateral and Vertical Graphene/Hexagonal Boron Nitride Heterostructures Grown by Molecular Beam Epitaxy

Lateral and Vertical Graphene/Hexagonal Boron Nitride Heterostructures Grown by Molecular Beam Epitaxy

This thesis discusses the investigation of graphene/ hexagonal Boron Nitride (hBN)heterostructures grown by Sergei V. Novikov and Tin S. Cheng using molecular beam epitaxy (MBE), with a focus on measurements recorded using atomic force microscopy (AFM), in particular conductive AFM (CAFM). MBE is a...

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Bibliographic Details
Main Author: Thomas, James C.
Format: Thesis (University of Nottingham only)
Language:English
Published: 2021
Subjects:
Graphene
conductive AFM
CAFM
atomic force microscopy
AFM
Boron Nitride
hBN
MBE growth
high strain
heterostructure
lattice matching
moire pattern
moire deformation
step-flow growth
lateral heterostructures
Online Access:https://eprints.nottingham.ac.uk/64262/

Internet

https://eprints.nottingham.ac.uk/64262/

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