Influence of surface passivation on indium arsenide nanowire band gap energies

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Influence of surface passivation on indium arsenide nanowire band gap energies

The interplay between surface chemistry and quantum confinement on the band gap energies of indium arsenide (InAs) nanowires is investigated by first principle computations as the surface-to-volume ratio increases with decreasing cross section. Electronic band structures are presented as determined...

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Bibliographic Details
Main Authors:	Razavi, Pedram, Greer, James C.
Format:	Article
Language:	English
Published:	Springer 2019
Online Access:	https://eprints.nottingham.ac.uk/57323/

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