Influence of surface passivation on indium arsenide nanowire band gap energies
The interplay between surface chemistry and quantum confinement on the band gap energies of indium arsenide (InAs) nanowires is investigated by first principle computations as the surface-to-volume ratio increases with decreasing cross section. Electronic band structures are presented as determined...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer
2019
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| Online Access: | https://eprints.nottingham.ac.uk/57323/ |