Electronic Properties of Novel Mid-Infrared Materials and Devices

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Electronic Properties of Novel Mid-Infrared Materials and Devices

This thesis describes the effects of the combined incorporation of nitrogen (N) and hydrogen (H) atoms in the narrow gap III-V InAs semiconductor. The plasmonic properties of the dilute nitride In(AsN) alloy are investigated before and after the post-growth incorporation of H-atoms. The hydrogenati...

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Bibliographic Details
Main Author:	Di Paola, D.M.
Format:	Thesis (University of Nottingham only)
Language:	English
Published:	2019
Subjects:	semiconductors mid-infrared condensed matter
Online Access:	https://eprints.nottingham.ac.uk/56139/

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