Electronic Properties of Novel Mid-Infrared Materials and Devices
This thesis describes the effects of the combined incorporation of nitrogen (N) and hydrogen (H) atoms in the narrow gap III-V InAs semiconductor. The plasmonic properties of the dilute nitride In(AsN) alloy are investigated before and after the post-growth incorporation of H-atoms. The hydrogenati...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2019
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| Online Access: | https://eprints.nottingham.ac.uk/56139/ |