Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

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Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating addit...

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Bibliographic Details
Main Authors:	Verni, Giuseppe Alessio, Long, Brenda, Gity, Farzan, Lanius, Martin, Schüffelgen, Peter, Mussler, Gregor, Grützmacher, Detlev, Greer, Jim, Holmes, Justin D.
Format:	Article
Language:	English
Published:	Royal Society of Chemistry 2018
Online Access:	https://eprints.nottingham.ac.uk/55520/

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