Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers
Bismuth has been identified as a material of interest for electronic applications due to its extremely high electron mobility and quantum confinement effects observed at nanoscale dimensions. However, it is also the case that Bi nanostructures are readily oxidised in ambient air, necessitating addit...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Royal Society of Chemistry
2018
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| Online Access: | https://eprints.nottingham.ac.uk/55520/ |