SiC MOSFET device parameter spread and ruggedness of parallel multichip structures
This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identifie...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Trans Tech Publications
2018
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| Online Access: | https://eprints.nottingham.ac.uk/54158/ |
| _version_ | 1848799019971641344 |
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| author | Castellazzi, Alberto Fayyaz, Asad Kraus, Rainer |
| author_facet | Castellazzi, Alberto Fayyaz, Asad Kraus, Rainer |
| author_sort | Castellazzi, Alberto |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions. |
| first_indexed | 2025-11-14T20:29:01Z |
| format | Article |
| id | nottingham-54158 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:29:01Z |
| publishDate | 2018 |
| publisher | Trans Tech Publications |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-541582018-09-11T09:39:49Z https://eprints.nottingham.ac.uk/54158/ SiC MOSFET device parameter spread and ruggedness of parallel multichip structures Castellazzi, Alberto Fayyaz, Asad Kraus, Rainer This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions. Trans Tech Publications 2018-06-01 Article PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/54158/1/SiC%20MOSFET%20device%20parameter%20spread%20and%20ruggedness%20of%20parallel%20multichip%20structures.pdf Castellazzi, Alberto, Fayyaz, Asad and Kraus, Rainer (2018) SiC MOSFET device parameter spread and ruggedness of parallel multichip structures. Materials Science Forum, 924 . pp. 811-817. ISSN 1662-9752 https://www.scientific.net/MSF.924.811 doi:10.4028/www.scientific.net/msf.924.811 doi:10.4028/www.scientific.net/msf.924.811 |
| spellingShingle | Castellazzi, Alberto Fayyaz, Asad Kraus, Rainer SiC MOSFET device parameter spread and ruggedness of parallel multichip structures |
| title | SiC MOSFET device parameter spread and ruggedness of parallel multichip structures |
| title_full | SiC MOSFET device parameter spread and ruggedness of parallel multichip structures |
| title_fullStr | SiC MOSFET device parameter spread and ruggedness of parallel multichip structures |
| title_full_unstemmed | SiC MOSFET device parameter spread and ruggedness of parallel multichip structures |
| title_short | SiC MOSFET device parameter spread and ruggedness of parallel multichip structures |
| title_sort | sic mosfet device parameter spread and ruggedness of parallel multichip structures |
| url | https://eprints.nottingham.ac.uk/54158/ https://eprints.nottingham.ac.uk/54158/ https://eprints.nottingham.ac.uk/54158/ |