SiC MOSFET device parameter spread and ruggedness of parallel multichip structures
This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identifie...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications
2018
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| Online Access: | https://eprints.nottingham.ac.uk/54158/ |
| Summary: | This paper presents a preliminary study of the impact of device electro-thermal parameter spread and temperature variation on the robustness of SiC MOSFET parallel multi-chip power switch architectures. Reference is made to 1200 V – 80 mΩ rated commercial devices. Some major parameters are identified and selected, presenting experimental evidence of their impact during transient overload events. An advanced physics-based simulation model is then employed to extend the analysis to a more comprehensive set of parameters and operational conditions. |
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