Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
In this work, we have investigated the structural and optical properties of GaAs(1−x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy t...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2018
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| Online Access: | https://eprints.nottingham.ac.uk/53835/ |
| _version_ | 1848798992365780992 |
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| author | Prando, G.A. Orsi Gordo, V. Puustinen, J. Hilska, J. Alghamdi, H.M. Som, G. Gunes, M. Akyol, M. Souto, S. Rodrigues, A.D. Galeti, H.V.A. Henini, M. Gobato, Y.Galvão Guina, M. |
| author_facet | Prando, G.A. Orsi Gordo, V. Puustinen, J. Hilska, J. Alghamdi, H.M. Som, G. Gunes, M. Akyol, M. Souto, S. Rodrigues, A.D. Galeti, H.V.A. Henini, M. Gobato, Y.Galvão Guina, M. |
| author_sort | Prando, G.A. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | In this work, we have investigated the structural and optical properties of GaAs(1−x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation. |
| first_indexed | 2025-11-14T20:28:35Z |
| format | Article |
| id | nottingham-53835 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:28:35Z |
| publishDate | 2018 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-538352019-07-17T04:30:34Z https://eprints.nottingham.ac.uk/53835/ Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates Prando, G.A. Orsi Gordo, V. Puustinen, J. Hilska, J. Alghamdi, H.M. Som, G. Gunes, M. Akyol, M. Souto, S. Rodrigues, A.D. Galeti, H.V.A. Henini, M. Gobato, Y.Galvão Guina, M. In this work, we have investigated the structural and optical properties of GaAs(1−x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy techniques. The FT-Raman results revealed a decrease of the relative intensity ratio of transverse and longitudinal optical modes with the increase of Bi concentration, which indicates a reduction of the structural disorder with increasing Bi incorporation. In addition, the PL results show an enhancement of the optical efficiency of the structures as the Bi concentration is increased due to important effects of exciton localization related to Bi defects, nonradiative centers and alloy disorder. These results provide evidence that Bi is incorporated effectively into the QW region. Finally, the temperature dependence of the PL spectra has evidenced two distinct types of defects related to the Bi incorporation, namely Bi clusters and pairs, and alloy disorder and potential fluctuation. IOP Publishing 2018-08-01 Article PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/53835/1/Revised%20Paper%20QW%20GaBiAs%20%28311%29B%20-%2008Jun18%20-%20Final%20Resubmission%20-%20Copia.pdf Prando, G.A., Orsi Gordo, V., Puustinen, J., Hilska, J., Alghamdi, H.M., Som, G., Gunes, M., Akyol, M., Souto, S., Rodrigues, A.D., Galeti, H.V.A., Henini, M., Gobato, Y.Galvão and Guina, M. (2018) Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 33 (8). 084002. ISSN 0268-1242 http://iopscience.iop.org/article/10.1088/1361-6641/aad02e/meta doi:10.1088/1361-6641/aad02e doi:10.1088/1361-6641/aad02e |
| spellingShingle | Prando, G.A. Orsi Gordo, V. Puustinen, J. Hilska, J. Alghamdi, H.M. Som, G. Gunes, M. Akyol, M. Souto, S. Rodrigues, A.D. Galeti, H.V.A. Henini, M. Gobato, Y.Galvão Guina, M. Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates |
| title | Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates |
| title_full | Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates |
| title_fullStr | Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates |
| title_full_unstemmed | Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates |
| title_short | Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates |
| title_sort | exciton localization and structural disorder of gaas1−xbix/gaas quantum wells grown by molecular beam epitaxy on (311)b gaas substrates |
| url | https://eprints.nottingham.ac.uk/53835/ https://eprints.nottingham.ac.uk/53835/ https://eprints.nottingham.ac.uk/53835/ |