Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

In this work, we have investigated the structural and optical properties of GaAs(1−x)Bix/GaAs single quantum wells (QWs) grown by molecular beam epitaxy on GaAs (311)B substrates using x-ray diffraction, atomic force microscopy, Fourier-transform Raman (FT-Raman) and photoluminescence spectroscopy t...

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Bibliographic Details
Main Authors: Prando, G.A., Orsi Gordo, V., Puustinen, J., Hilska, J., Alghamdi, H.M., Som, G., Gunes, M., Akyol, M., Souto, S., Rodrigues, A.D., Galeti, H.V.A., Henini, M., Gobato, Y.Galvão, Guina, M.
Format: Article
Language:English
Published: IOP Publishing 2018
Online Access:https://eprints.nottingham.ac.uk/53835/

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https://eprints.nottingham.ac.uk/53835/

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