Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime

Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime

It is becoming a great interest to employ SiC based power devices in dual active bridge (DAB) converter as an alternative to conventional Si-IGBT, due to its higher switching frequency potential, smaller switching losses as well as the capability to operate at synchronous rectification (SR) conditio...

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Bibliographic Details
Main Authors: Wang, Zhenyu, Castellazzi, Alberto
Format: Conference or Workshop Item
Language:English
Published: 2018
Online Access:https://eprints.nottingham.ac.uk/53767/

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