Wang, Z., & Castellazzi, A. (2018). Device loss model of a fully SiC based dual active bridge considering the effect of synchronous rectification and deadtime.
Chicago Style (17th ed.) CitationWang, Zhenyu, and Alberto Castellazzi. Device Loss Model of a Fully SiC Based Dual Active Bridge Considering the Effect of Synchronous Rectification and Deadtime. 2018.
MLA (9th ed.) CitationWang, Zhenyu, and Alberto Castellazzi. Device Loss Model of a Fully SiC Based Dual Active Bridge Considering the Effect of Synchronous Rectification and Deadtime. 2018.
Warning: These citations may not always be 100% accurate.