A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field

A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field

While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being smaller in size. These features can result in prematu...

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Bibliographic Details
Main Authors: DiMarino, C., Mouawad, Bassem, Skuriat, Robert, Li, Ke, Xu, L., Johnson, Christopher Mark, Boroyevich, D.
Format: Conference or Workshop Item
Language:English
Published: 2018
Online Access:https://eprints.nottingham.ac.uk/53664/

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