A wire-bond-less 10 KV SiC MOSFET power module with reduced common-mode noise and electric field
While wide-bandgap devices offer many benefits, they also bring new challenges for designers. In particular, the new 10 kV silicon carbide (SiC) MOSFETs can switch higher voltages faster and with lower losses than silicon devices while also being smaller in size. These features can result in prematu...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Online Access: | https://eprints.nottingham.ac.uk/53664/ |