Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

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Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted from the electronic structure for relaxed and strained nano...

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Bibliographic Details
Main Authors:	Razavi, Pedram, Greer, James C.
Format:	Article
Language:	English
Published:	Elsevier 2018
Subjects:	InAs nanowires; Strain; Charge transport; Semiconductors; DFT; Meta-GGA
Online Access:	https://eprints.nottingham.ac.uk/53494/

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