Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires
The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted from the electronic structure for relaxed and strained nano...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2018
|
| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/53494/ |