High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes

High-temperature molecular beam epitaxy of hexagonal boron nitride with high active nitrogen fluxes

Hexagonal boron nitride (hBN) has attracted much attention as a key component in van der Waals heterostructures and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of highly oriented p...

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Bibliographic Details
Main Authors: Cheng, Tin S., Summerfield, Alex, Mellor, Christopher J., Khlobystov, Andrei N., Eaves, Laurence, Foxon, C. Thomas, Beton, Peter H., Novikov, Sergei V.
Format: Article
Published: MDPI 2018
Subjects:
UKNC; III-nitrides; nanostructures; MBE
hexagonal boron nitride
Online Access:https://eprints.nottingham.ac.uk/52636/

Internet

https://eprints.nottingham.ac.uk/52636/

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