Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter

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Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter

GaN device as one potential power electronics device has been gained much attention recently. One of the power conversion systems, ANPC inverter using GaN HEMT is potentially considered to be prospective usage of low loss and high efficiency. In this work, we demonstrate one optimised PWM scheme aim...

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Bibliographic Details
Main Authors:	Zeng, Y., Gurpinar, Emre, Hussein, A., Castellazzi, Alberto
Format:	Conference or Workshop Item
Language:	English
Published:	2018
Subjects:	GaN HEMT Single Phase 3L ANPC Inverter Optimised PWM control
Online Access:	https://eprints.nottingham.ac.uk/51445/

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