Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter
GaN device as one potential power electronics device has been gained much attention recently. One of the power conversion systems, ANPC inverter using GaN HEMT is potentially considered to be prospective usage of low loss and high efficiency. In this work, we demonstrate one optimised PWM scheme aim...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/51445/ |