Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconduc...

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Main Authors: Moro, Fabrizio, Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Puttock, Robert, Kazakova, Olga, Makarovsky, Oleg, Fay, Michael, Parmenter, Christopher D.J., Kovalyuk, Zakhar D., Fielding, Alistair John, Kern, Michal, van Slageren, Joris, Patanè, Amalia
Format: Article
Published: Wiley-VCH Verlag 2018
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Online Access:https://eprints.nottingham.ac.uk/51442/
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author Moro, Fabrizio
Bhuiyan, Mahabub A.
Kudrynskyi, Zakhar R.
Puttock, Robert
Kazakova, Olga
Makarovsky, Oleg
Fay, Michael
Parmenter, Christopher D.J.
Kovalyuk, Zakhar D.
Fielding, Alistair John
Kern, Michal
van Slageren, Joris
Patanè, Amalia
author_facet Moro, Fabrizio
Bhuiyan, Mahabub A.
Kudrynskyi, Zakhar R.
Puttock, Robert
Kazakova, Olga
Makarovsky, Oleg
Fay, Michael
Parmenter, Christopher D.J.
Kovalyuk, Zakhar D.
Fielding, Alistair John
Kern, Michal
van Slageren, Joris
Patanè, Amalia
author_sort Moro, Fabrizio
building Nottingham Research Data Repository
collection Online Access
description The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system.
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institution University of Nottingham Malaysia Campus
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publishDate 2018
publisher Wiley-VCH Verlag
recordtype eprints
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spelling nottingham-514422020-05-04T19:36:13Z https://eprints.nottingham.ac.uk/51442/ Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal Moro, Fabrizio Bhuiyan, Mahabub A. Kudrynskyi, Zakhar R. Puttock, Robert Kazakova, Olga Makarovsky, Oleg Fay, Michael Parmenter, Christopher D.J. Kovalyuk, Zakhar D. Fielding, Alistair John Kern, Michal van Slageren, Joris Patanè, Amalia The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system. Wiley-VCH Verlag 2018-05-11 Article PeerReviewed Moro, Fabrizio, Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Puttock, Robert, Kazakova, Olga, Makarovsky, Oleg, Fay, Michael, Parmenter, Christopher D.J., Kovalyuk, Zakhar D., Fielding, Alistair John, Kern, Michal, van Slageren, Joris and Patanè, Amalia (2018) Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5 (7). 1800257/1-1800257/7. ISSN 2198-3844 van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy https://onlinelibrary.wiley.com/doi/abs/10.1002/advs.201800257 doi:10.1002/advs.201800257 doi:10.1002/advs.201800257
spellingShingle van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy
Moro, Fabrizio
Bhuiyan, Mahabub A.
Kudrynskyi, Zakhar R.
Puttock, Robert
Kazakova, Olga
Makarovsky, Oleg
Fay, Michael
Parmenter, Christopher D.J.
Kovalyuk, Zakhar D.
Fielding, Alistair John
Kern, Michal
van Slageren, Joris
Patanè, Amalia
Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
title Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
title_full Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
title_fullStr Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
title_full_unstemmed Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
title_short Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
title_sort room temperature uniaxial magnetic anisotropy induced by fe-islands in the inse semiconductor van der waals crystal
topic van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy
url https://eprints.nottingham.ac.uk/51442/
https://eprints.nottingham.ac.uk/51442/
https://eprints.nottingham.ac.uk/51442/