Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal
The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconduc...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
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Wiley-VCH Verlag
2018
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| Online Access: | https://eprints.nottingham.ac.uk/51442/ |
| _version_ | 1848798496985972736 |
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| author | Moro, Fabrizio Bhuiyan, Mahabub A. Kudrynskyi, Zakhar R. Puttock, Robert Kazakova, Olga Makarovsky, Oleg Fay, Michael Parmenter, Christopher D.J. Kovalyuk, Zakhar D. Fielding, Alistair John Kern, Michal van Slageren, Joris Patanè, Amalia |
| author_facet | Moro, Fabrizio Bhuiyan, Mahabub A. Kudrynskyi, Zakhar R. Puttock, Robert Kazakova, Olga Makarovsky, Oleg Fay, Michael Parmenter, Christopher D.J. Kovalyuk, Zakhar D. Fielding, Alistair John Kern, Michal van Slageren, Joris Patanè, Amalia |
| author_sort | Moro, Fabrizio |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system. |
| first_indexed | 2025-11-14T20:20:42Z |
| format | Article |
| id | nottingham-51442 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:20:42Z |
| publishDate | 2018 |
| publisher | Wiley-VCH Verlag |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-514422020-05-04T19:36:13Z https://eprints.nottingham.ac.uk/51442/ Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal Moro, Fabrizio Bhuiyan, Mahabub A. Kudrynskyi, Zakhar R. Puttock, Robert Kazakova, Olga Makarovsky, Oleg Fay, Michael Parmenter, Christopher D.J. Kovalyuk, Zakhar D. Fielding, Alistair John Kern, Michal van Slageren, Joris Patanè, Amalia The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconducting and magnetic nanostructured materials. Here, a new material system is reported, which comprises the InSe semiconductor van der Waals crystal that embeds ferromagnetic Fe-islands. In contrast to many traditional semiconductors, the electronic properties of InSe are largely preserved after the incorporation of Fe. Also, this system exhibits ferromagnetic resonances and a large uniaxial magnetic anisotropy at room temperature, offering opportunities for the development of functional devices that integrate magnetic and semiconducting properties within the same material system. Wiley-VCH Verlag 2018-05-11 Article PeerReviewed Moro, Fabrizio, Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Puttock, Robert, Kazakova, Olga, Makarovsky, Oleg, Fay, Michael, Parmenter, Christopher D.J., Kovalyuk, Zakhar D., Fielding, Alistair John, Kern, Michal, van Slageren, Joris and Patanè, Amalia (2018) Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal. Advanced Science, 5 (7). 1800257/1-1800257/7. ISSN 2198-3844 van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy https://onlinelibrary.wiley.com/doi/abs/10.1002/advs.201800257 doi:10.1002/advs.201800257 doi:10.1002/advs.201800257 |
| spellingShingle | van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy Moro, Fabrizio Bhuiyan, Mahabub A. Kudrynskyi, Zakhar R. Puttock, Robert Kazakova, Olga Makarovsky, Oleg Fay, Michael Parmenter, Christopher D.J. Kovalyuk, Zakhar D. Fielding, Alistair John Kern, Michal van Slageren, Joris Patanè, Amalia Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal |
| title | Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal |
| title_full | Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal |
| title_fullStr | Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal |
| title_full_unstemmed | Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal |
| title_short | Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal |
| title_sort | room temperature uniaxial magnetic anisotropy induced by fe-islands in the inse semiconductor van der waals crystal |
| topic | van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy |
| url | https://eprints.nottingham.ac.uk/51442/ https://eprints.nottingham.ac.uk/51442/ https://eprints.nottingham.ac.uk/51442/ |