Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal

Room temperature uniaxial magnetic anisotropy induced by Fe-islands in the InSe semiconductor van der Waals crystal

The controlled manipulation of the spin and charge of electrons in a semiconductor has the potential to create new routes to digital electronics beyond Moore’s law, spintronics, and quantum detection and imaging for sensing applications. These technologies require a shift from traditional semiconduc...

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Bibliographic Details
Main Authors: Moro, Fabrizio, Bhuiyan, Mahabub A., Kudrynskyi, Zakhar R., Puttock, Robert, Kazakova, Olga, Makarovsky, Oleg, Fay, Michael, Parmenter, Christopher D.J., Kovalyuk, Zakhar D., Fielding, Alistair John, Kern, Michal, van Slageren, Joris, Patanè, Amalia
Format: Article
Published: Wiley-VCH Verlag 2018
Subjects:
van der Waals semiconductor; InSe; Iron; Electron Spin Resonance (ESR); Magnetic anisotropy
Online Access:https://eprints.nottingham.ac.uk/51442/

Internet

https://eprints.nottingham.ac.uk/51442/

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