GaN HEMT gate-driver for achieving high power converter integration levels

QR Code

GaN HEMT gate-driver for achieving high power converter integration levels

This work proposes a solution for implementing an isolated gate driver for GaN HEMTs based on the previous topology for SiC power MOSFETs. The isolation of the gate driver is realised by the single transformer topology with double winding in the secondary side. The Bi-level HF Amplitude Modulation...

Full description

Bibliographic Details
Main Authors:	Wu, H, Garcia, J., Castellazzi, A.
Format:	Conference or Workshop Item
Language:	English
Published:	2018
Subjects:	GaN HEMT Gate driver
Online Access:	https://eprints.nottingham.ac.uk/51428/

Similar Items

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
by: Oeder, Thorsten, et al.
Published: (2017)

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs
by: Oeder, Thorsten, et al.
Published: (2017)

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)

Static and dynamic TSEPs of SiC and GaN transistors
by: Zhu, Siwei, et al.
Published: (2018)

GaN-HEMT dynamic ON-state resistance characterisation and modelling
by: Li, Ke, et al.
Published: (2016)

EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)

Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter
by: Zeng, Y., et al.
Published: (2018)

Design of low inductance switching power cell for GaN HEMT based inverter
by: Gurpinar, Emre, et al.
Published: (2017)

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)

Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter
by: Gurpinar, Emre, et al.
Published: (2016)

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN
by: Moldovan, Grigore, et al.
Published: (2004)

Trade-off study of heat sink and output filter volume in a GaN HEMT based single phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)

Tradeoff study of heat sink and output filter volume in a GaN HEMT based single-phase inverter
by: Gurpinar, Emre, et al.
Published: (2017)

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)

Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012)

Individual device active cooling for enhanced system-level power density and more uniform temperature distribution
by: Zeng, Y., et al.
Published: (2018)

Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters
by: Gurpinar, Emre, et al.
Published: (2016)

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions
by: Li, Ke, et al.
Published: (2016)

SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation
by: Li, Ke, et al.
Published: (2016)

High-frequency power conversion for photovoltaic module applications
by: Sergentanis, Grigorios
Published: (2024)

Coupling of Pyro–Piezo-Phototronic Effects in a GaN Nanowire
by: Qin, G., et al.
Published: (2023)

Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2001)

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties
by: Yang, K., et al.
Published: (2023)

Investigation of deep level defects in advanced semiconductor materials and devices
by: AL Saqri, Noor alhuda Ahmed
Published: (2017)

Impulse transformer based secondary-side self-powered gate-driver for wide-range PWM operation of SiC power MOSFETs
by: Garcia, Jorge, et al.
Published: (2016)

High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs
by: Garcia, Jorge, et al.
Published: (2017)

Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy
by: Han, Yisong
Published: (2006)

Wide-bandgap semiconductor based power converters for renewable energy systems
by: Gurpinar, Emre
Published: (2017)

Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2016)

Single-phase T-Type inverter performance benchmark Using Si IGBTs, SiC MOSFETs, and GaN HEMTs
by: Gurpinar, Emre, et al.
Published: (2015)

Design optimization of quasi-active gate control for series-connected power devices
by: Teerakawanich, Nithiphat, et al.
Published: (2014)

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance
by: Li, Ke, et al.
Published: (2017)

Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE
by: Goff, Lucy Elizabeth
Published: (2015)

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
by: Fay, Mike W., et al.
Published: (2008)

Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy
by: Fay, Mike W., et al.
Published: (2005)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

Anisotropic electromechanical properties of GaN ceramics caused by polarisation
by: Qin, G.S., et al.
Published: (2020)

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)

Ion-selective membrane-integrated water-gated AlGaN/GaN HEMT for high-stability detection of agricultural herbicides
by: Firdaus, Amirul, et al.
Published: (2025)