GaN HEMT gate-driver for achieving high power converter integration levels
This work proposes a solution for implementing an isolated gate driver for GaN HEMTs based on the previous topology for SiC power MOSFETs. The isolation of the gate driver is realised by the single transformer topology with double winding in the secondary side. The Bi-level HF Amplitude Modulation...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/51428/ |