Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data
We investigate the CaF1/Si(111) interface using a combination of high-resolution scanning tunnelling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF1 films grown at substrate temperatures between 550 and 600 ◦C on...
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| Format: | Article |
| Language: | English |
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American Physical Society
2018
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| Online Access: | https://eprints.nottingham.ac.uk/51009/ |
| _version_ | 1848798390689726464 |
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| author | Rahe, Philipp Smith, Emily F. Wollschläger, Joachim Moriarty, Philip J. |
| author_facet | Rahe, Philipp Smith, Emily F. Wollschläger, Joachim Moriarty, Philip J. |
| author_sort | Rahe, Philipp |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | We investigate the CaF1/Si(111) interface using a combination of high-resolution scanning tunnelling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF1 films grown at substrate temperatures between 550 and 600 ◦C on Si(111) surfaces reveal the existence of two island types that are distinguished by their edge topology, nucleation position, measured height, and inner defect structure. Our data suggest a growth model where the two island types are the result of two reaction pathways during CaF1 interface formation. A key difference between these two pathways is identified to arise from the excess species during the growth process, which can be either fluorine or silicon. Structural details as a result of this difference are identified by means of high-resolution noncontact atomic force microscopy and add insights into the growth mode of this heteroepitaxial insulator-on-semiconductor system. |
| first_indexed | 2025-11-14T20:19:01Z |
| format | Article |
| id | nottingham-51009 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:19:01Z |
| publishDate | 2018 |
| publisher | American Physical Society |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-510092018-04-09T09:35:11Z https://eprints.nottingham.ac.uk/51009/ Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data Rahe, Philipp Smith, Emily F. Wollschläger, Joachim Moriarty, Philip J. We investigate the CaF1/Si(111) interface using a combination of high-resolution scanning tunnelling and noncontact atomic force microscopy operated at cryogenic temperature as well as x-ray photoelectron spectroscopy. Submonolayer CaF1 films grown at substrate temperatures between 550 and 600 ◦C on Si(111) surfaces reveal the existence of two island types that are distinguished by their edge topology, nucleation position, measured height, and inner defect structure. Our data suggest a growth model where the two island types are the result of two reaction pathways during CaF1 interface formation. A key difference between these two pathways is identified to arise from the excess species during the growth process, which can be either fluorine or silicon. Structural details as a result of this difference are identified by means of high-resolution noncontact atomic force microscopy and add insights into the growth mode of this heteroepitaxial insulator-on-semiconductor system. American Physical Society 2018-03-15 Article PeerReviewed application/pdf en https://eprints.nottingham.ac.uk/51009/1/RaheMoriartyCaF.pdf Rahe, Philipp, Smith, Emily F., Wollschläger, Joachim and Moriarty, Philip J. (2018) Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data. Physical Review B, 97 (12). p. 125418. ISSN 2469-9969 https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.125418 doi:10.1103/PhysRevB.97.125418 doi:10.1103/PhysRevB.97.125418 |
| spellingShingle | Rahe, Philipp Smith, Emily F. Wollschläger, Joachim Moriarty, Philip J. Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data |
| title | Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data |
| title_full | Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data |
| title_fullStr | Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data |
| title_full_unstemmed | Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data |
| title_short | Formation routes and structural details of the CaF1 layer on Si(111) from high-resolution noncontact atomic force microscopy data |
| title_sort | formation routes and structural details of the caf1 layer on si(111) from high-resolution noncontact atomic force microscopy data |
| url | https://eprints.nottingham.ac.uk/51009/ https://eprints.nottingham.ac.uk/51009/ https://eprints.nottingham.ac.uk/51009/ |