Stress-dependent local oxidation of silicon
The two-dimensional isolation oxidation of silicon is considered for stress-dependent reaction and diffusion coefficients. The influence of such parameters is investigated numerically and asymptotically in the bird's beak problem and for curved geometries arising in the oxidation of cylindrical...
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| Format: | Article |
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Society for Industrial and Applied Mathematics
2017
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| Online Access: | https://eprints.nottingham.ac.uk/50646/ |
| _version_ | 1848798304657211392 |
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| author | Evans, J.D. King, J.R. |
| author_facet | Evans, J.D. King, J.R. |
| author_sort | Evans, J.D. |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | The two-dimensional isolation oxidation of silicon is considered for stress-dependent reaction and diffusion coefficients. The influence of such parameters is investigated numerically and asymptotically in the bird's beak problem and for curved geometries arising in the oxidation of cylindrical and spherical structures. In the bird's beak problem, the limit of large activation volume is described for a stress-dependent reaction coefficient, illustrating the significant growth retardation of the silicon/silicon oxide interface and reduced stresses in the silicon oxide. Novel high-order nonlinear evolution-type PDEs are derived and investigated using asymptotic and numerical techniques. |
| first_indexed | 2025-11-14T20:17:39Z |
| format | Article |
| id | nottingham-50646 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:17:39Z |
| publishDate | 2017 |
| publisher | Society for Industrial and Applied Mathematics |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-506462020-05-04T19:20:12Z https://eprints.nottingham.ac.uk/50646/ Stress-dependent local oxidation of silicon Evans, J.D. King, J.R. The two-dimensional isolation oxidation of silicon is considered for stress-dependent reaction and diffusion coefficients. The influence of such parameters is investigated numerically and asymptotically in the bird's beak problem and for curved geometries arising in the oxidation of cylindrical and spherical structures. In the bird's beak problem, the limit of large activation volume is described for a stress-dependent reaction coefficient, illustrating the significant growth retardation of the silicon/silicon oxide interface and reduced stresses in the silicon oxide. Novel high-order nonlinear evolution-type PDEs are derived and investigated using asymptotic and numerical techniques. Society for Industrial and Applied Mathematics 2017-12-02 Article PeerReviewed Evans, J.D. and King, J.R. (2017) Stress-dependent local oxidation of silicon. SIAM Journal on Applied Mathematics, 77 (6). pp. 2012-2039. ISSN 0036-1399 https://epubs.siam.org/doi/10.1137/16M1060613 doi:10.1137/16M1060613 doi:10.1137/16M1060613 |
| spellingShingle | Evans, J.D. King, J.R. Stress-dependent local oxidation of silicon |
| title | Stress-dependent local oxidation of silicon |
| title_full | Stress-dependent local oxidation of silicon |
| title_fullStr | Stress-dependent local oxidation of silicon |
| title_full_unstemmed | Stress-dependent local oxidation of silicon |
| title_short | Stress-dependent local oxidation of silicon |
| title_sort | stress-dependent local oxidation of silicon |
| url | https://eprints.nottingham.ac.uk/50646/ https://eprints.nottingham.ac.uk/50646/ https://eprints.nottingham.ac.uk/50646/ |