Improved performance of InSe field-effect transistors by channel encapsulation

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Improved performance of InSe field-effect transistors by channel encapsulation

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air...

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Bibliographic Details
Main Authors:	Liang, Guangda, Wang, Yiming, Han, Lin, Yang, Zai-xing, Xin, Qian, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia, Song, Aimin
Format:	Article
Published:	IOP Publishing 2018
Online Access:	https://eprints.nottingham.ac.uk/50419/

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