Improved performance of InSe field-effect transistors by channel encapsulation
Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Published: |
IOP Publishing
2018
|
| Online Access: | https://eprints.nottingham.ac.uk/50419/ |