Improved performance of InSe field-effect transistors by channel encapsulation
Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Published: |
IOP Publishing
2018
|
| Online Access: | https://eprints.nottingham.ac.uk/50419/ |
| _version_ | 1848798246366871552 |
|---|---|
| author | Liang, Guangda Wang, Yiming Han, Lin Yang, Zai-xing Xin, Qian Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Patanè, Amalia Song, Aimin |
| author_facet | Liang, Guangda Wang, Yiming Han, Lin Yang, Zai-xing Xin, Qian Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Patanè, Amalia Song, Aimin |
| author_sort | Liang, Guangda |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly (methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials. |
| first_indexed | 2025-11-14T20:16:43Z |
| format | Article |
| id | nottingham-50419 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:16:43Z |
| publishDate | 2018 |
| publisher | IOP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-504192020-05-04T19:36:54Z https://eprints.nottingham.ac.uk/50419/ Improved performance of InSe field-effect transistors by channel encapsulation Liang, Guangda Wang, Yiming Han, Lin Yang, Zai-xing Xin, Qian Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Patanè, Amalia Song, Aimin Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly (methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials. IOP Publishing 2018-05-17 Article PeerReviewed Liang, Guangda, Wang, Yiming, Han, Lin, Yang, Zai-xing, Xin, Qian, Kudrynskyi, Zakhar R., Kovalyuk, Zakhar D., Patanè, Amalia and Song, Aimin (2018) Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33 (6). 06LT01/1-06LT01/5. ISSN 1361-6641 http://iopscience.iop.org/article/10.1088/1361-6641/aab62b/meta doi:10.1088/1361-6641/aab62b doi:10.1088/1361-6641/aab62b |
| spellingShingle | Liang, Guangda Wang, Yiming Han, Lin Yang, Zai-xing Xin, Qian Kudrynskyi, Zakhar R. Kovalyuk, Zakhar D. Patanè, Amalia Song, Aimin Improved performance of InSe field-effect transistors by channel encapsulation |
| title | Improved performance of InSe field-effect transistors by channel encapsulation |
| title_full | Improved performance of InSe field-effect transistors by channel encapsulation |
| title_fullStr | Improved performance of InSe field-effect transistors by channel encapsulation |
| title_full_unstemmed | Improved performance of InSe field-effect transistors by channel encapsulation |
| title_short | Improved performance of InSe field-effect transistors by channel encapsulation |
| title_sort | improved performance of inse field-effect transistors by channel encapsulation |
| url | https://eprints.nottingham.ac.uk/50419/ https://eprints.nottingham.ac.uk/50419/ https://eprints.nottingham.ac.uk/50419/ |