Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors
Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET module with embedded DC-link capacitors. It s...
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers
2018
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| Online Access: | https://eprints.nottingham.ac.uk/50387/ |
| _version_ | 1848798239057248256 |
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| author | Yang, Li Li, Ke Dai, Jingru Corfield, Martin Harris, Anne Paciura, Krzysztof O'Brien, John Johnson, C. Mark |
| author_facet | Yang, Li Li, Ke Dai, Jingru Corfield, Martin Harris, Anne Paciura, Krzysztof O'Brien, John Johnson, C. Mark |
| author_sort | Yang, Li |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET module with embedded DC-link capacitors. It shows faster switching transition and less overshoot voltage compared to a module using an identical package but without capacitors. Active power cycling and passive temperature cycling are carried out for package reliability characterization and comparisons are made with commercial Si and SiC power modules. Scanning acoustic microscopy images and thermal structure functions are presented to quantify the effects of package degradation. The results demonstrate that the SiC modules with embedded capacitors have similar reliability performance to commercial modules and that the reliability is not adversely affected by the presence of the decoupling capacitors. |
| first_indexed | 2025-11-14T20:16:36Z |
| format | Article |
| id | nottingham-50387 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-14T20:16:36Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-503872019-04-29T10:18:40Z https://eprints.nottingham.ac.uk/50387/ Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors Yang, Li Li, Ke Dai, Jingru Corfield, Martin Harris, Anne Paciura, Krzysztof O'Brien, John Johnson, C. Mark Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET module with embedded DC-link capacitors. It shows faster switching transition and less overshoot voltage compared to a module using an identical package but without capacitors. Active power cycling and passive temperature cycling are carried out for package reliability characterization and comparisons are made with commercial Si and SiC power modules. Scanning acoustic microscopy images and thermal structure functions are presented to quantify the effects of package degradation. The results demonstrate that the SiC modules with embedded capacitors have similar reliability performance to commercial modules and that the reliability is not adversely affected by the presence of the decoupling capacitors. Institute of Electrical and Electronics Engineers 2018-04-16 Article PeerReviewed application/pdf en cc_by https://eprints.nottingham.ac.uk/50387/8/08318641.pdf Yang, Li, Li, Ke, Dai, Jingru, Corfield, Martin, Harris, Anne, Paciura, Krzysztof, O'Brien, John and Johnson, C. Mark (2018) Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors. IEEE Transactions on Power Electronics, 33 (12). pp. 10594-10601. ISSN 1941-0107 SiC MOSFET module embedded capacitor switching performance thermo-mechanical reliability https://ieeexplore.ieee.org/abstract/document/8318641/ doi:10.1109/TPEL.2018.2809923 doi:10.1109/TPEL.2018.2809923 |
| spellingShingle | SiC MOSFET module embedded capacitor switching performance thermo-mechanical reliability Yang, Li Li, Ke Dai, Jingru Corfield, Martin Harris, Anne Paciura, Krzysztof O'Brien, John Johnson, C. Mark Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors |
| title | Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors |
| title_full | Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors |
| title_fullStr | Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors |
| title_full_unstemmed | Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors |
| title_short | Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors |
| title_sort | electrical performance and reliability characterization of a sic mosfet power module with embedded decoupling capacitors |
| topic | SiC MOSFET module embedded capacitor switching performance thermo-mechanical reliability |
| url | https://eprints.nottingham.ac.uk/50387/ https://eprints.nottingham.ac.uk/50387/ https://eprints.nottingham.ac.uk/50387/ |