Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors

Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors

Integration of decoupling capacitors in SiC MOSFET modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2kV SiC MOSFET module with embedded DC-link capacitors. It s...

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Bibliographic Details
Main Authors: Yang, Li, Li, Ke, Dai, Jingru, Corfield, Martin, Harris, Anne, Paciura, Krzysztof, O'Brien, John, Johnson, C. Mark
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers 2018
Subjects:
SiC
MOSFET module
embedded capacitor
switching performance
thermo-mechanical reliability
Online Access:https://eprints.nottingham.ac.uk/50387/

Internet

https://eprints.nottingham.ac.uk/50387/

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