Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs
This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applica...
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| Format: | Conference or Workshop Item |
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2017
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| Online Access: | https://eprints.nottingham.ac.uk/50048/ |
| _version_ | 1848798139153121280 |
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| author | Fayyaz, Asad Castellazzi, Alberto Romano, G. Riccio, M. Urresti, J. Wright, N. |
| author_facet | Fayyaz, Asad Castellazzi, Alberto Romano, G. Riccio, M. Urresti, J. Wright, N. |
| author_sort | Fayyaz, Asad |
| building | Nottingham Research Data Repository |
| collection | Online Access |
| description | This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material properties of SiC material means that SiC MOSFETs even at 1200V exhibit significant intrinsic avalanche robustness. |
| first_indexed | 2025-11-14T20:15:01Z |
| format | Conference or Workshop Item |
| id | nottingham-50048 |
| institution | University of Nottingham Malaysia Campus |
| institution_category | Local University |
| last_indexed | 2025-11-14T20:15:01Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | nottingham-500482020-05-04T18:47:12Z https://eprints.nottingham.ac.uk/50048/ Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs Fayyaz, Asad Castellazzi, Alberto Romano, G. Riccio, M. Urresti, J. Wright, N. This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material properties of SiC material means that SiC MOSFETs even at 1200V exhibit significant intrinsic avalanche robustness. 2017-05-28 Conference or Workshop Item PeerReviewed Fayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J. and Wright, N. (2017) Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs. In: 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 28 May-1 June 2017, Sapporo, Japan. avalanche ruggeddness; silicon carbide; unclamped inductive swithching; power MOSFET; robustness http://ieeexplore.ieee.org/document/7988986/ |
| spellingShingle | avalanche ruggeddness; silicon carbide; unclamped inductive swithching; power MOSFET; robustness Fayyaz, Asad Castellazzi, Alberto Romano, G. Riccio, M. Urresti, J. Wright, N. Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs |
| title | Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs |
| title_full | Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs |
| title_fullStr | Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs |
| title_full_unstemmed | Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs |
| title_short | Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs |
| title_sort | influence of gate bias on the avalanche ruggedness of sic power mosfets |
| topic | avalanche ruggeddness; silicon carbide; unclamped inductive swithching; power MOSFET; robustness |
| url | https://eprints.nottingham.ac.uk/50048/ https://eprints.nottingham.ac.uk/50048/ |