Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs
This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applica...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/50048/ |