Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs

Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs

This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applica...

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Bibliographic Details
Main Authors: Fayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J., Wright, N.
Format: Conference or Workshop Item
Published: 2017
Subjects:
avalanche ruggeddness; silicon carbide; unclamped inductive swithching; power MOSFET; robustness
Online Access:https://eprints.nottingham.ac.uk/50048/
Description
Summary:This paper investigates the effect of negative gate bias voltage (VGS) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device’s ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material properties of SiC material means that SiC MOSFETs even at 1200V exhibit significant intrinsic avalanche robustness.

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