Fayyaz, A., Castellazzi, A., Romano, G., Riccio, M., Urresti, J., & Wright, N. (2017). Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs.
Chicago Style (17th ed.) CitationFayyaz, Asad, Alberto Castellazzi, G. Romano, M. Riccio, J. Urresti, and N. Wright. Influence of Gate Bias on the Avalanche Ruggedness of SiC Power MOSFETs. 2017.
MLA (9th ed.) CitationFayyaz, Asad, et al. Influence of Gate Bias on the Avalanche Ruggedness of SiC Power MOSFETs. 2017.
Warning: These citations may not always be 100% accurate.