Design of low inductance switching power cell for GaN HEMT based inverter

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Design of low inductance switching power cell for GaN HEMT based inverter

In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented...

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Bibliographic Details
Main Authors:	Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng, Castellazzi, Alberto, Blaabjerg, Frede
Format:	Article
Published:	IEEE 2017
Subjects:	Wide bandgap (WBG) power devices galliumnitride (GaN) HEMT three-level active neutral point clamped (3L-ANPC) converter photovoltaic (PV) systems stray inductance.
Online Access:	https://eprints.nottingham.ac.uk/49652/

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