Design of low inductance switching power cell for GaN HEMT based inverter
In this paper, an ultra-low inductance power cell is designed for a three-Level Active Neutral Point Clamped (3LANPC) based on 650 V gallium nitride (GaN) HEMT devices. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented...
| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
IEEE
2017
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| Subjects: | |
| Online Access: | https://eprints.nottingham.ac.uk/49652/ |